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1

MBE growth of ALGaN/GaN HEMTS on resistive Si(1 1 1) substrate with RF small signal and power performances

Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquière, J.C. DeJaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J-C.

Journal:

Journal of Crystal Growth

Année:

2003

Langue:

english

Fichier:

PDF, 230 KB

english, 2003

2

Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(1 1 1) and GaN templates

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.-P. Faurie

Journal:

Journal of Crystal Growth

Année:

2005

Langue:

english

Fichier:

PDF, 178 KB

english, 2005

3

Highly sensitive strained AlN on Si(1 1 1) resonators

M. Placidi, J.C. Moreno, P. Godignon, N. Mestres, E. Frayssinet, F. Semond, C. Serre

Journal:

Sensors and Actuators A: Physical

Année:

2009

Langue:

english

Fichier:

PDF, 414 KB

english, 2009

4

Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities

K. Bejtka, F. Rizzi, P. R. Edwards, R. W. Martin, E. Gu, M. D. Dawson, I. M. Watson, I. R. Sellers, F. Semond

Journal:

physica status solidi (a)

Année:

2005

Langue:

english

Fichier:

PDF, 165 KB

english, 2005

5

AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)

Y. Cordier, J.-C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond

Journal:

physica status solidi (c)

Année:

2009

Langue:

english

Fichier:

PDF, 180 KB

english, 2009

6

Electronic structure of wurtzite and zinc-blende AlN

P. Jonnard, N. Capron, F. Semond, J. Massies, E. Martinez-Guerrero, H. Mariette

Journal:

The European Physical Journal B / Condensed Matter and Complex Systems

Année:

2004

Langue:

english

Fichier:

PDF, 520 KB

english, 2004

7

AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

Boulay, S., Touati, S., Sar, A.A., Hoel, V., Gaquiere, C., De Jaeger, J.-C., Joblot, S., Cordier, Y., Semond, F., Massies, J.

Journal:

IEEE Transactions on Electron Devices

Année:

2007

Langue:

english

Fichier:

PDF, 828 KB

english, 2007

8

Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates

Mohammed R. Ramdani, Magdalena Chmielowska, Yvon Cordier, Sébastien Chenot, Fabrice Semond

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 980 KB

english, 2012

9

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

Cordier, Yvon, Moreno, Jean-Christophe, Baron, Nicolas, Frayssinet, Eric, Chenot, SÉbastien, Damilano, Benjamin, Semond, Fabrice

Journal:

IEEE Electron Device Letters

Année:

2008

Langue:

english

Fichier:

PDF, 239 KB

english, 2008

10

Epitaxial challenges of GaN on silicon

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 4.00 MB

english, 2015

11

Near-infrared III-nitride-on-silicon nanophotonic platform with microdisk resonators

Roland, I., Zeng, Y., Checoury, X., El Kurdi, M., Sauvage, S., Brimont, C., Guillet, T., Gayral, B., Gromovyi, M., Duboz, J. Y., Semond, F., de Micheli, M. P., Boucaud, P.

Journal:

Année:

2016

Langue:

english

Fichier:

PDF, 3.15 MB

english, 2016

12

Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate

Hossain, Tasnia, Rashid, Mohammad Junaebur, Frayssinet, Eric, Baron, Nicolas, Damilano, Benjamin, Semond, Fabrice, Wang, J., Durand, Lise, Ponchet, Anne, Demangeot, Francois, Cordier, Yvon

Journal:

physica status solidi (b)

Année:

2018

Langue:

english

Fichier:

PDF, 796 KB

english, 2018

13

GaN on Si(111): From Growth Optimization to Optical Properties of Quantum Well Structures

F. Semond, B. Damilano, S. Vézian, N. Grandjean, M. Leroux, J. Massies

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 171 KB

english, 1999

14

Violet to Orange Room Temperature Luminescence from GaN Quantum Dots on Si(111) Substrates

B. Damilano, N. Grandjean, F. Semond, J. Massies, M. Leroux

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 229 KB

english, 1999

15

Temperature Dependence of Photoluminescence Intensities of Undoped and Doped GaN

M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, P. Gibart

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 120 KB

english, 1999

16

Near-Field Optical Spectroscopy of Multiple Stacked Planes of GaN/AlN Quantum Dots

P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, F. Semond, J. Massies

Journal:

physica status solidi (b)

Année:

2001

Langue:

english

Fichier:

PDF, 155 KB

english, 2001

17

Optical Characterization of AlxGa1—xN Alloys (x < 0.7) Grown on Sapphire or Silicon

M. Leroux, S. Dalmasso, F. Natali, S. Helin, C. Touzi, S. Laügt, M. Passerel, F. Omnes, F. Semond, J. Massies, P. Gibart

Journal:

physica status solidi (b)

Année:

2002

Langue:

english

Fichier:

PDF, 109 KB

english, 2002

18

Growth by Molecular Beam Epitaxy and Optical Properties of a Ten-Period AlGaN/AlN Distributed Bragg Reflector on (111)Si

F. Semond, N. Antoine-Vincent, N. Schnell, G. Malpuech, M. Leroux, J. Massies, P. Disseix, J. Leymarie, A. Vasson

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 122 KB

english, 2001

19

Dielectric Microcavity in GaN/Si

J.-Y. Duboz, L. Dua, G. Glastre, P. Legagneux, J. Massies, F. Semond, N. Grandjean

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 99 KB

english, 2001

20

High Performance Solar Blind Detectors Based on AlGaN Grown by MBE on Si

J.-Y. Duboz, J.-L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, J. Massies

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 83 KB

english, 2001

21

Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications

F. Semond, Y. Cordier, N. Grandjean, F. Natali, B. Damilano, S. Vézian, J. Massies

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 197 KB

english, 2001

22

Potentialities of GaN-Based Microcavities Grown on Silicon Substrates

N. Antoine-Vincent, F. Natali, F. Semond, M. Leroux, N. Grandjean, J. Massies, J. Leymarie, A. Vasson

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 96 KB

english, 2001

23

Micro-Raman Study of Wurtzite AlN Layers Grown on Si(111)

J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, F. Semond, J. Massies

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 95 KB

english, 2001

24

Recombination Dynamics in GaN/AlGaN Quantum Wells: The Role of Built-in Fields

D. Alderighi, A. Vinattieri, J. Kudrna, M. Colocci, A. Reale, G. Kokolakis, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 118 KB

english, 2001

25

Modelling and Spectroscopy of GaN Microcavities

N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, M. Leroux, J. Massies

Journal:

physica status solidi (a)

Année:

2002

Langue:

english

Fichier:

PDF, 131 KB

english, 2002

26

Steady-State and Time-Resolved Near-Field Optical Spectroscopy of GaN/AlN Quantum Dots and InGaN/GaN Quantum Wells

J. Kudrna, P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, F. Semond, N. Grandjean, J. Massies

Journal:

physica status solidi (a)

Année:

2002

Langue:

english

Fichier:

PDF, 129 KB

english, 2002

27

Resonant and Non-Resonant Dynamics of Excitons and Free Carriers in GaN/AlGaN Quantum Wells

A. Vinattieri, D. Alderighi, J. Kudrna, M. Colocci, A. Reale, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies

Journal:

physica status solidi (a)

Année:

2002

Langue:

english

Fichier:

PDF, 1.60 MB

english, 2002

28

O 1s investigation of SiO2/Si interface formation using an alkali metal promoter

M. Riehl-Chudoba, S. Nishigaki, Y. Huttel, F. Sèmond, Ph. Brun, P. Soukiassian

Journal:

Applied Surface Science

Année:

1993

Langue:

english

Fichier:

PDF, 622 KB

english, 1993

29

SIMS investigation of the Si(111) oxidation promoted by potassium overlayers

Boris Lamontagne, Fabrice Semond, Alain Adnot, Denis Roy

Journal:

Applied Surface Science

Année:

1995

Langue:

english

Fichier:

PDF, 833 KB

english, 1995

30

X-ray photoelectron spectroscopic study of Si(111) oxidation promoted by potassium multilayers under low O2 pressures

B. Lamontagne, F. Semond, D. Roy

Journal:

Journal of Electron Spectroscopy and Related Phenomena

Année:

1995

Langue:

english

Fichier:

PDF, 606 KB

english, 1995

31

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Y. Cordier, F. Semond, J-C. Moreno, E. Frayssinet, B. Benbakhti, Z. Cao, S. Chenot, L. Nguyen, O. Tottereau, A. Soltani, K. Blary

Journal:

Materials Science in Semiconductor Processing

Année:

2009

Langue:

english

Fichier:

PDF, 526 KB

english, 2009

32

Optical and excitonic properties of ZnO films

M. Mihailovic, A.-L. Henneghien, S. Faure, P. Disseix, J. Leymarie, A. Vasson, D.A. Buell, F. Semond, C. Morhain, J. Zùñiga Pérez

Journal:

Optical Materials

Année:

2009

Langue:

english

Fichier:

PDF, 396 KB

english, 2009

33

Optical investigations of bulk and multi-quantum well nitride-based microcavities

F. Réveret, F. Médard, P. Disseix, J. Leymarie, M. Mihailovic, A. Vasson, I.R. Sellers, F. Semond, M. Leroux, J. Massies

Journal:

Optical Materials

Année:

2009

Langue:

english

Fichier:

PDF, 602 KB

english, 2009

34

Optical study of bulk ZnO for strong coupling observation in ZnO-based microcavities

F. Médard, J. Zúñiga-Perez, E. Frayssinet, J.C. Moreno, F. Semond, S. Faure, P. Disseix, J. Leymarie, M. Mihailovic, A. Vasson, T. Guillet, M. Leroux

Journal:

Photonics and Nanostructures - Fundamentals and Applications

Année:

2009

Langue:

english

Fichier:

PDF, 737 KB

english, 2009

35

Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride

S Vézian, F Natali, F Semond, J Massies

Journal:

Applied Surface Science

Année:

2004

Langue:

english

Fichier:

PDF, 227 KB

english, 2004

36

AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(1 1 1)

Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennegues, J. Massies

Journal:

Journal of Crystal Growth

Année:

2005

Langue:

english

Fichier:

PDF, 216 KB

english, 2005

37

In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy

Y. Cordier, N. Baron, F. Semond, J. Massies, M. Binetti, B. Henninger, M. Besendahl, T. Zettler

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 240 KB

english, 2007

38

Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBE

Y. Cordier, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 267 KB

english, 2007

39

Mechanisms of ammonia—MBE growth of GaN on SiC for transport devices

H. Tang, S. Rolfe, F. Semond, J.A. Bardwell, J.M. Baribeau

Journal:

Journal of Crystal Growth

Année:

2009

Langue:

english

Fichier:

PDF, 517 KB

english, 2009

40

Selectively grown AlGaN/GaN HEMTs on Si(1 1 1) substrates for integration with silicon microelectronics

S. Haffouz, F. Semond, J.A. Bardwell, T. Lester, H. Tang

Journal:

Journal of Crystal Growth

Année:

2009

Langue:

english

Fichier:

PDF, 437 KB

english, 2009

41

Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies

Journal:

Journal of Crystal Growth

Année:

2009

Langue:

english

Fichier:

PDF, 420 KB

english, 2009

42

AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first?

A. Le Louarn, S. Vézian, F. Semond, J. Massies

Journal:

Journal of Crystal Growth

Année:

2009

Langue:

english

Fichier:

PDF, 486 KB

english, 2009

43

Epitaxial growth of GdN on silicon substrate using an AlN buffer layer

F. Natali, N.O.V. Plank, J. Galipaud, B.J. Ruck, H.J. Trodahl, F. Semond, S. Sorieul, L. Hirsch

Journal:

Journal of Crystal Growth

Année:

2010

Langue:

english

Fichier:

PDF, 490 KB

english, 2010

44

Atomic scale engineering of nanostructures at silicon carbide surfaces

Patrick Soukiassian, Vincent Derycke, Fabrice Semond, Victor Yu. Aristov

Journal:

Microelectronics Journal

Année:

2005

Langue:

english

Fichier:

PDF, 669 KB

english, 2005

45

Epitaxial aluminium nitride on patterned silicon

J.C. Moreno, E. Frayssinet, F. Semond, M. Placidi, P. Godignon

Journal:

Materials Science in Semiconductor Processing

Année:

2009

Langue:

english

Fichier:

PDF, 296 KB

english, 2009

46

Electronic properties of deep defects in n-type GaN

P. Muret, Ch. Ulzhöfer, J. Pernot, Y. Cordier, F. Semond, Ch. Gacquière, D. Théron

Journal:

Superlattices and Microstructures

Année:

2004

Langue:

english

Fichier:

PDF, 455 KB

english, 2004

47

About some optical properties of AlxGa1−xN /GaN quantum wells grown by molecular beam epitaxy

M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le Louarn, S. Vézian, J. Massies

Journal:

Superlattices and Microstructures

Année:

2004

Langue:

english

Fichier:

PDF, 344 KB

english, 2004

48

Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC

Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. Moriceau

Journal:

Superlattices and Microstructures

Année:

2006

Langue:

english

Fichier:

PDF, 361 KB

english, 2006

49

AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini, J. Massies

Journal:

Superlattices and Microstructures

Année:

2006

Langue:

english

Fichier:

PDF, 353 KB

english, 2006

50

Polariton thermalization in GaN microcavities in the strong light–matter coupling regime

F. Stokker-Cheregi, M. Zamfirescu, A. Vinattieri, M. Gurioli, I. Sellers, F. Semond, M. Leroux, J. Massies

Journal:

Superlattices and Microstructures

Année:

2007

Langue:

english

Fichier:

PDF, 625 KB

english, 2007